铁电材料研究的背景及现状分析

重庆交通大学学报（自然科学版） ›› 2007, Vol. 26 ›› Issue (4): 151-155.

铁电材料研究的背景及现状分析

郭琳^1,2，刘会³

1.中国矿业大学信息与电气学院，江苏徐州 221008；2.徐州建筑职业技术学院，江苏徐州 221008 3.四川建筑职业技术学院，四川德阳 618000

收稿日期:2006-05-30 修回日期:2006-07-31 出版日期:2007-08-15 发布日期:2015-05-18
作者简介:郭琳(1972一)，女，江苏徐州人，讲师，硕士研究生，主要从事大学物理和智能控制方面的教学和科研工作.E—mail：glhttok@163.com.

Background Research and Present State Analysis of Ferroelectric Materials

GUO Lin^1,2，LIU Hui³

1.Information and Electric CoHege，China University of Mining and Technology，Jiangsu Xuzhou 221008，China； 2.Xuzhou Institute of Architecture Technology ，Jiangsu Xuzhou 221008，China； 3，Sichuan College of Architecture Techology ，Sichuan Deyang 618000，China

Received:2006-05-30 Revised:2006-07-31 Online:2007-08-15 Published:2015-05-18

摘要/Abstract

摘要： 铁电材料具有良好的铁电性、压电性、热释电性以及非线性光学等特性，是当前国际高新技术材料中非常活跃的研究领域之一，其研究热点正向实用化发展．在这主要介绍了铁电材料的发展历史、研究方法、研究现状及应用前景，并对铁电材料的尺寸效应与表面界面效应、金属或半导体电极间的铁电薄膜以及铁电聚合物和复合材料等现阶段主要热点问题进行了深入的分析研究．

关键词: 铁电材料, 唯象理论, 软模理论

Abstract: Ferroelectric material is of good ferroelectricity，piezoelectricity，pyroelectricity and nonlinear optics etc，and it has become one of the active research fields of high and new technology materials，which makes the study of ferroelectric ma terials develop into practice.Mainly introduce the development background，research methods，present state and application foreground of ferroelectric materials，and deeply analyze the hot problems about the size efects，surface and interface efects， ferroelectric thin films coated with metal or semiconducting electrodes，the ferroelectric polymers and complex materials.

Key words: ferroelectric materials, phenomenological theory, soft model theory

中图分类号:

TB381

郭琳，刘会. 铁电材料研究的背景及现状分析[J]. 重庆交通大学学报（自然科学版）, 2007, 26(4): 151-155.

GUO Lin ，LIU Hui. Background Research and Present State Analysis of Ferroelectric Materials[J]. Journal of Chongqing Jiaotong University(Natural Science), 2007, 26(4): 151-155.

参考文献

[1]肖定全.集成铁电学与铁电集成薄膜[J].物理,1994,10:577-581.
[2]黄龙波,李佐宜,卢德新,等.溅射制备铁电薄膜及其性能测试德研究[J].人工晶体学报,1994,23(4):291-295.
[3]Kanno I,Hayashi S,Takayama R,et al.Processing andcharacterization of ferroelectric thin films by muti-ion-beam sputtering[J].Nuclear instruments and methods inphysics research section B:beam interactions with materi-als and atoms,1996,112(1):125-128.
[4]赵新伟,裴志斌,田长生.溶胶-凝胶法制备铁电薄膜[J].材料工程,1994,17:24-31.
[5]Alguer幃M,Calzada M L,Pardo L.The effect of filmthickness on the ferroelectric properties of sol-gel preparedlanthanum modified lead titanate thin films[J].Journal ofthe European Ceramic Society,1999,19(7):1481-1484.
[6]陈逸清,郑元荣,林成鲁,等.脉冲准分子激光PZT薄膜德制备[J].中国激光,1994,2(8):631-634.
[7]Goux L,Gervais M,Gervais F,et al.Pulsed laser deposi-tion of fferroelectric BST thin films on perovskite sub-strates:an Infrared Characterization[J].The Internation-al Journal of Inorganic Materials,2001,3(7):839-842.
[8]钟维烈.铁电体物理学[M].北京:科学出版社,2002.
[9][美]莱因斯ME,格拉斯AM.铁电体及有关材料的原理和应用[M].钟维烈译,王华馥校.北京:科学出版社,1989.
[10]Ginzburg V L,Eksp Zh.Polarization and piezoelectriceffect in BaTiO3near the fer-roelectric-transition point[J].Teor.Fiz,1949,19:36-41.
[11]Devonshire AF.Theory of ferroelectrics[J].Adv.phys,1954,3(10):85-130.
[12]钟维烈.铁电体物理学[M].北京:科学出版社,2000,8-9;130-150.
[13]Cochran W.Crystal stability and the theory of ferroelec-tricity[J].Phys.Rev.Lett,1959,3(9):412-414.
[14]De Gennes P G.Collective Motions of Hydrogen Bonds[J].Solid State Commun,1963,1(6):132-137.
[15]Blinc R,Zeks B.Tunnelling and collective excitations ina microscopic model of ferroelectricity[J].Adv.Phys.1966,4(10):507-510.
[16]Zhou J H,Yang C Z.Curie Temperature of ferroelectricsuperlattice described by the transverse ising model[J].Solid State Commun,1997,101(8):639-642.
[17]肖定全.铁电薄膜的物理性能和应用[J].物理,1995,(7):433-438.
[18]Achard H,Mac啨HL.Peccoud device processing and in-tegration on ferroelectric thin films for memory applica-tions[J].Microelectronic Engineering,1995,29(1-4):19-28.
[19]Petrovsky V I,Sigoy A S.Integrated ferroelectric struc-tures for informations storage and CCD microprocessor de-vices[J].Microelectronic Engineering,1995,29(1):11-18.
[20]Wang Y G,Zhang P L,Zhong W L.Ferroelectric filmsdescribed by transverse ising model with long-range inter-actions[J].Solid State Commun,1997,101(11):807-810.
[21]Jiang B,Peng J L,Bursill L A,et al.Size effects on ferro-electricity of ultrafine particles of PbTiO3[J].J.Appl.Phys.2000,87(7):3462-3467.
[22]Glinchuk M D,Eliseev E A,Stephanovich V A.The de-polarization field effect on the thin ferroelectric films prop-erties[J].Physica B,2002,322(3):356-370.
[23]Park Y.Surface effect and phase transitions in ferroelec-tric thin films[J].Solid State Commun,1999,112(3):167-171.
[24]Kretschmer R,Binder K.Surface effects on phase transi-tions in ferroelectrics and dipolar magnets[J].Phys.Rev.B,1979,20(3-1):1065-1076.
[25]M櫣ller H.Properties of rochelle salt[J].Phys.Rev,1994,57:829-832.
[26]Kiyotoshi M,Eguchi K.Ultrathin SrTiO3films preparedby chemical vapor deposition on nb-doped SrTiO3 sub-strates[J].Appl.Phys.lett,1995,67(17):2468-2470.
[27]Watanabe Y,Matsumoto Y,Kuniomo H,et al.Crystal-lograhic and electrical properties of epitaxial BaTiO3 filmgrown on conductive and insulating perovskite oxides[J].Jpn.Appl.Phys,1994,33(9B):5182-5186.
[28]Tan E K,Osman J,Tilley D R.Calculation of intrinsichysteresis loops of ferroelectric loops of ferroelectric thinfilms[J].Solid State Commum,2001,117(2):59-64.
[29]Lye-Hock Ong,Junaidah Osman,Tilley D R.Landau the-ory of second-order phase transitions in ferroelectric films[J].Phys.Rev.B,2001,63:144109-1-144109-10.
[30]L櫣TQ,Cao W W.Generalized continuum theory for fer-roelectric thin films[J].Phys.Rev.B,2002,66:024102-1-024102-5;1-5.
[31]Wesselinowa J M.Dielectric Susceptibility of ferroelectricthin films[J].Solid State Commun,2002,121(9-10):489-492.
[32]Nie P F,Zhang Jian,Zhen Yin,et al.Theoretical study ofdielectric susceptibility in ferroelectric thin films[J].Phys.Lett.A,2001,290(3-4):176-181.
[33]Yukio Watanabe.Theoretical stability of the polarizationin insulating ferroelectric/semiconductor structures[J].J.Appl.Phys,1998,83(4):2179-2193.
[34]Batra I P,Wurfel P,Silverman B D.Newtype of first-or-der phase transition in ferroelectric thin films[J].Phys.Rev.Lett,1973,30(9-26):384-387.
[35]Wurfel P,Batra I P.Depolarization-field-induced instabil-ity in thin ferroelectric films-experiment and theory[J].Phys.Rev.B,1973,8(11-1):5126-5133.
[36]Zhong W L,Wang Y G,Zhang P L.Size effects on phasetransitions in ferroelectric films[J].Phys.Lett.A,1994,189:121-126.
[37]Or Y T,Wong C K,Ploss B,et al.Polarization behaviorof ferroelectric multilayered composite structures[J].J.Appl.Phys,2003,93(7):4112-4119.
[38]Kepler R G,Anderson R A.Ferroelectric polymers[J].Adv.Phys,1992,41(1):1-57.